Stable bismuth sub-monolayer termination of Bi₂Se₃

Title: Stable bismuth sub-monolayer termination of Bi₂Se₃
Creator: Hermanowicz, M.; Koczorowski, W.; Bazarnik, M.; Kopciuszynski, M.; Zdyb, R.; Materna, A.; Hruban, A.; Czajka, R.; Radny, M. W.
Relation: Applied Surface Science Vol. 476, Issue 15 May 2019, p. 701-705
Publisher Link: http://dx.doi.org/10.1016/j.apsusc.2019.01.011
Publisher: Elsevier
Resource Type: journal article
Date: 2019
Description: Surface electronic properties of Bi₂Se₃ and Bi₂Te₃ topological insulators are known to evolve with varying surface termination. In this work, the (1 1 1) surface of Bi₂Se₃ has been studied with a comprehensive combination of experimental and computational (density functional theory) methods. It has been demonstrated that with proper preparation conditions the system can be forced into a new stable surface termination – a sub-monolayer of bismuth acquired through selective Se desorption – which has not been explored yet.
Subject: bismuth selenide; surface electronic structure; surface termination; topological insulator
Identifier: http://hdl.handle.net/1959.13/1403232
Identifier: uon:35135
Identifier: ISSN:0169-4332
Language: eng
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